The operation principle, fabrication, and measurement results for a stand-alone amplifier based on impact ionization are reported. The device was built in silicon using standard microelectronic processes. Testing was performed by connecting the device to both silicon and indium-gallium-arsenide photodiodes to demonstrate its compatibility with arbitrary current sources. Preamplified leakage currents of less than were measured along with current gains greater than 100.
REFERENCES
1.
R. J.
McIntyre
, IEEE Trans. Electron Devices
46
, 1623
(1999
).2.
J.
Kim
, Y.
Yamamoto
, and H. H.
Hogue
, Appl. Phys. Lett.
70
, 2852
(1997
).3.
D. C.
Herbert
and R. G.
Davis
, IEEE Trans. Electron Devices
47
, 197
(2000
).4.
5.
J. C.
Campbell
, A. G.
Dentai
, W. S.
Holden
, and B. L.
Kasper
, Electron. Lett.
19
, 818
(1983
).6.
7.
W. N.
Grant
, Solid-State Electron.
16
, 1189
(1973
).8.
C. A.
Armiento
and S. H.
Groves
, Appl. Phys. Lett.
43
, 198
(1983
).9.
10.
A. R.
Hawkins
, T. E.
Reynolds
, D. R.
England
, D. I.
Babic
, M. J.
Mondry
, K.
Streubel
, and J. E.
Bowers
, Appl. Phys. Lett.
68
, 3692
(1996
).11.
Y.
Kang
, Y.-H.
Lo
, M.
Bitter
, S.
Kristjansson
, Z.
Pan
, and A.
Pauchard
, Appl. Phys. Lett.
85
, 1668
(2004
).12.
S.
Miura
, T.
Mikawa
, H.
Kuwatsuka
, N.
Yasuoka
, T.
Tanahashi
, and O.
Wada
, Appl. Phys. Lett.
54
, 2422
(1989
).13.
T. J.
de Lyon
, B.
Baumgratz
, G.
Chapman
, E.
Gordon
, A. T.
Hunter
, M.
Jack
, J. E.
Jensen
, W.
Johnson
, B.
Johs
, K.
Kosai
, W.
Larsen
, G. L.
Olson
, M.
Sen
, and B.
Walker
, Proc. SPIE
3629
, 256
(1999
).14.
J. C.
Campbell
, S.
Demiguel
, F.
Ma
, A.
Beck
, X.
Guo
, S.
Wang
, X.
Zheng
, X.
Li
, J. D.
Beck
, M. A.
Kinch
, A.
Huntington
, L. A.
Coldren
, J.
Decobert
, and N.
Tscherptner
, IEEE J. Quantum Electron.
10
, 777
(2004
).© 2005 American Institute of Physics.
2005
American Institute of Physics
You do not currently have access to this content.
