Epitaxial SrRuO3Ba0.7Sr0.3TiO3 (BST)/SrRuO3 thin film capacitors were prepared on SrTiO3 substrates by pulsed laser deposition. The structures of stacked BST films with different thicknesses were investigated by transmission electron microscopy. A distinctive layer of about 3nm of thickness was identified within BST films thicker than 9nm at the interface with the SrRuO3 bottom electrode. The distinctive layer is misfit dislocation-free showing pseudoconstant lattice parameters. Misfit dislocations are formed at the interface between the distinctive layer and the BST film bulk layer relaxing the latter as the film thickness increases. The effect of the distinctive layer on the system dielectric response is discussed within the framework of an interfacial dead-layer model.

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According to Ref. 12, the difference between the contributions of the top electrodes to the dielectric responses of SRO/BST/SRO (the same samples) and SRO/BST/Pt capacitors, both with similar BST film qualities, was evaluated as: 1ci2Pt1ci2SRO4μm2pF. If 1ci1Pt+1ci2Pt9μm2pF (from Fig. 7 in Ref. 9) for a symmetric Pt/BST/Pt capacitor, 1ci2SRO0.5μm2pF can be estimated by assuming 1ci1Pt1ci2Pt.

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The values used for the estimation were: s11=5.9μm2N1, s12=1.9μm2N1, Q12=0.0346×1024μm4C2, S0(T=300K)1×102 (nominal strain estimated from the bulk lattice constants of SRO and BST), and dc=9nm for a growth regime free of kinetic limitation, η=1. More details in Ref. 10.

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