Epitaxial (BST)/ thin film capacitors were prepared on substrates by pulsed laser deposition. The structures of stacked BST films with different thicknesses were investigated by transmission electron microscopy. A distinctive layer of about of thickness was identified within BST films thicker than at the interface with the bottom electrode. The distinctive layer is misfit dislocation-free showing pseudoconstant lattice parameters. Misfit dislocations are formed at the interface between the distinctive layer and the BST film bulk layer relaxing the latter as the film thickness increases. The effect of the distinctive layer on the system dielectric response is discussed within the framework of an interfacial dead-layer model.
REFERENCES
According to Ref. 12, the difference between the contributions of the top electrodes to the dielectric responses of SRO/BST/SRO (the same samples) and SRO/BST/Pt capacitors, both with similar BST film qualities, was evaluated as: . If (from Fig. 7 in Ref. 9) for a symmetric Pt/BST/Pt capacitor, can be estimated by assuming .
The values used for the estimation were: , , , (nominal strain estimated from the bulk lattice constants of SRO and BST), and for a growth regime free of kinetic limitation, . More details in Ref. 10.