In this letter, the contrast reversal effect in scanning-capacitance-microscopy (SCM) dopant concentration extraction is investigated both theoretically and experimentally. The shift of the turning point in the nonmonotonic response of peak signal versus dopant concentration to higher dopant concentrations is explained by the difference of the capture/emission time constant of the interface states and the series resistance of the semiconductor sample. This is verified by comparing the experimental SCM measurements with the simulated peak profile on a -type multiple dopant step sample. The contrast reversal effect, which affects the accuracy of dopant concentration extraction using the SCM peak signal, can be minimized by using an overlying oxide with good interfacial quality and a semiconductor sample of low series resistance.
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1 August 2005
Research Article|
July 27 2005
Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction
K. M. Wong;
K. M. Wong
Department of Electrical and Computer Engineering,
National University of Singapore
, 4 Engineering Drive 3, Singapore 117576
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W. K. Chim;
W. K. Chim
a)
Department of Electrical and Computer Engineering,
National University of Singapore
, 4 Engineering Drive 3, Singapore 117576
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J. Yan
J. Yan
Department of Electrical and Computer Engineering,
National University of Singapore
, 4 Engineering Drive 3, Singapore 117576
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
Appl. Phys. Lett. 87, 053504 (2005)
Article history
Received:
April 22 2005
Accepted:
June 14 2005
Citation
K. M. Wong, W. K. Chim, J. Yan; Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction. Appl. Phys. Lett. 1 August 2005; 87 (5): 053504. https://doi.org/10.1063/1.2006979
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