We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.
REFERENCES
1.
J. R.
Gao
, J. N.
Hovenier
, Z. Q.
Yang
, J. J.A.
Baselmans
, A.
Baryshev
, M.
Hajenius
, T. M.
Klapwijk
, A. J.L.
Adam
, T. O.
Klaassen
, B. S.
Williams
, S.
Kumar
, Q.
Hu
, and J. L.
Reno
, Appl. Phys. Lett.
86
, 244104
(2005
).2.
J. J.A.
Baselmans
, M.
Hajenius
, J. R.
Gao
, T. M.
Klapwijk
, P. A.J.
de Korte
, B.
Voronov
, and G.
Gol‘tsman
, Appl. Phys. Lett.
84
, 1958
(2004
).3.
P.
Khosropanah
, Ph.D. thesis, Chalmers University of Technology
, 2003
.4.
T. M.
Klapwijk
, R.
Barends
, J. R.
Gao
, M.
Hajenius
, and J. J.A.
Baselmans
, Proc. SPIE
5498
, 129
(2004
).5.
M.
Hajenius
, R.
Barends
, J. R.
Gao
, T. M.
Klapwijk
, J. J.A.
Baselmans
, A.
Baryshev
, B.
Voronov
and G.
Gol‘tsman
, IEEE Trans. Appl. Supercond.
15
, 495
(2005
).6.
7.
M. R.
Beasley
, J. E.
Mooij
, and T. P.
Orlando
, Phys. Rev. Lett.
42
, 1165
(1979
).8.
R. F.
Voss
, C. M.
Knoedler
, and P. M.
Horn
, Phys. Rev. Lett.
45
, 1523
(1980
).9.
10.
H.
Su
, N.
Yoshikawa
, and M.
Sugahara
, Supercond. Sci. Technol.
9
, A152
(1996
).11.
12.
13.
A. M.
Kadin
, K.
Epstein
, and A. M.
Goldman
, Phys. Rev. B
27
, 6691
(1983
).14.
In earlier work the current dependence has been considered but in a different way than applied here. See
A. I.
Elantiev
and B. S.
Karasik
, Sov. J. Low Temp. Phys.
15
, 379
(1989
);R. S.
Nebosis
, A. D.
Semenov
, Yu. P.
Gousev
, and K. F.
Renk
, Proceedings of the Seventh International Symposium on Space THz Technology, 1996
, p. 601
, and Ref. 3.15.
B. S.
Karasik
and A. I.
Elantiev
, Appl. Phys. Lett.
68
, 853
(1996
).16.
R.
Barends
, M.
Hajenius
, J. R.
Gao
, and T. M.
Klapwijk
, Proceedings of the 16th International Symposium on Space THz Technology, 2005
.© 2005 American Institute of Physics.
2005
American Institute of Physics
You do not currently have access to this content.