Electrical properties of the gate stacks with atomic-layer-deposited HfO2 dielectric on either a HF-last cleaned Si substrate or chemical oxide grown by an O3de-ionized water clean have been evaluated. The properties of the oxide layers formed at the interface between the high-k dielectric and the substrate in both types of gate stacks are similar as they exhibit identical equivalent oxide thickness and comparable gate leakage current values. However, the gate stack formed on the HF-last cleaned surface shows higher intrinsic mobility and transient charge trapping, which may be explained by the oxygen deficiency model.

1.
W.
Tsai
,
L.
Ragnarsson
,
P. J.
Chen
,
B.
Onsia
,
R. J.
Carter
,
E.
Cartier
,
E.
Young
,
M.
Green
,
M.
Caymax
,
S.
De Gendt
, and
M.
Heyns
,
Proc. Dig. Papers, Symp. VLSI Technol.
,
2003
, pp.
3A
3
.
2.
C. S.
Kang
,
H.-J.
Cho
,
K.
Onishi
,
R.
Choi
,
Y. H.
Kim
,
R.
Nieh
,
J.
Han
,
S.
Krishnan
,
A.
Shahriar
, and
J. C.
Lee
,
Tech. Dig. - Int. Electron Devices Meet.
2002
,
865
.
3.
S.
Inumiya
,
K.
Sekine
,
S.
Niwa
,
A.
Kaneko
,
M.
Sato
,
T.
Watanabe
,
H.
Fukui
,
Y.
Kamata
,
M.
Koyama
,
A.
Nishiyama
,
M.
Takayanagi
,
K.
Eguchi
, and
Y.
Tsunashima
,
VLSI Tech. Sym. Dig.
,
2003
, pp.
17
18
.
4.
M.
Koike
,
T.
Ino
,
Y.
Kamimuta
,
M.
Koyama
,
Y.
Kamata
,
M.
Suzuki
,
Y.
Mitani
,
A.
Nishiyama
, and
Y.
Tsunashima
,
Tech. Dig. - Int. Electron Devices Meet.
2003
,
107
.
5.
H.
Bender
,
T.
Conard
,
H.
Nohira
,
J.
Petry
,
O.
Richard
,
C.
Zhao
,
B.
Brijs
,
W.
Besling
,
C.
Detavernier
,
W.
Vandervorst
,
M.
Caymax
,
S.
De Gendt
,
J.
Chen
,
J.
Kluth
,
W.
Tsai
, and
J. W.
Maes
, International Workshop on Gate Insulator, session 5,
2001
.
6.
Y.
Senzaki
,
S.
Park
,
H.
Chatham
,
L.
Bartholomew
, and
W.
Nieveen
,
J. Vac. Sci. Technol. A
22
,
1175
(
2004
).
7.
J. R.
Hauser
and
K.
Ahmed
,
International Conference on Characterization and Metrology for ULSI Technology
,
1998
, pp.
235
239
.
8.
J. R.
Hauser
,
IEEE Trans. Electron Devices
43
,
1981
(
1996
).
9.
M.
Copel
,
M.
Gribelyuk
, and
E.
Gusev
,
Appl. Phys. Lett.
76
,
436
(
2000
).
10.
G.
Bersuker
,
P.
Zeitzoff
,
J. H.
Sim
,
B. H.
Lee
,
R.
Choi
,
G.
Brown
, and
C. D.
Young
,
Appl. Phys. Lett.
87
,
0402095
(
2005
).
11.
C. D.
Young
,
P.
Zeitzoff
,
G. A.
Brown
,
G.
Bersuker
,
B. H.
Lee
, and
J.
Hauser
,
IEEE Electron Device Lett.
26
,
586
(
2005
).
12.
G.
Bersuker
,
J.
Barnett
,
N.
Moumen
,
B.
Foran
,
C. D.
Young
,
P.
Lysaght
,
J.
Peterson
,
B. H.
Lee
,
P. M.
Zeitzoff
, and
H. R.
Huff
,
Jpn. J. Appl. Phys., Part 1
43
,
7899
(
2004
).
13.
G.
Bersuker
,
J.
Peterson
,
J.
Barnett
,
J.
Sim
,
R.
Choi
,
B. H.
Lee
,
P.
Lysaght
, and
H. R.
Huff
, The 207th Electrochemical Society Meeting, Abs. No. 623,
2005
.
14.
H. F.
Okorn-Schmidt
,
IBM J. Res. Dev.
43
,
3
(
1999
).
You do not currently have access to this content.