We report that post-deposition rinsing of metalorganic-chemical-vapor-deposited Hf-silicate dielectric with HCl (500:1) improves mobility, bias instabilities, and stress-induced leakage current of metal-oxide-semiconductor field-effect transistors. Reduction of bulk charge trapping has primarily been attributed to this improvement. High-pressure anneal improved interface states significantly, with no effect on bulk trapping characteristics. HCl post-treatment did not show any apparent effect on interface state properties.
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.© 2005 American Institute of Physics.
2005
American Institute of Physics
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