We report that post-deposition rinsing of metalorganic-chemical-vapor-deposited Hf-silicate dielectric with HCl (500:1) improves mobility, bias instabilities, and stress-induced leakage current of metal-oxide-semiconductor field-effect transistors. Reduction of bulk charge trapping has primarily been attributed to this improvement. High-pressure H2 anneal improved interface states significantly, with no effect on bulk trapping characteristics. HCl post-treatment did not show any apparent effect on interface state properties.

1.
G. D.
Wilk
,
R. M.
Wallace
, and
J. M.
Anthony
,
J. Appl. Phys.
87
,
484
(
2000
).
2.
S.
Gopalan
,
K.
Onishi
,
R.
Nieh
,
C. S.
Kang
,
R.
Choi
,
H.-J.
Cho
,
S.
Krishnan
, and
J. C.
Lee
,
Appl. Phys. Lett.
80
,
4416
(
2002
).
3.
C.
Hobbs
,
L.
Fonseca
,
V.
Dhandapani
,
S.
Samavedam
,
B.
Taylor
,
J.
Grant
,
L.
Dip
,
D.
Triyoso
,
R.
Hegde
,
D.
Gilmer
,
R.
Garcia
,
D.
Roan
,
L.
Lovejoy
,
R.
Rai
,
L.
Hebert
,
H.
Tseng
,
B.
White
, and
P.
Tobin
,
VLSI Symp. Tech. Dig.
2003
,
9
.
4.
D.-G.
Park
,
Z. J.
Luo
,
N.
Edleman
,
W.
Zhu
,
P.
Nguyen
,
K.
Wong
,
C.
Cabral
,
P.
Jamison
,
B. H.
Lee
,
A.
Chou
,
M.
Chudzik
,
J.
Bruley
,
O.
Gluschenkov
,
P.
Ronsheim
,
A.
Chakravarti
,
R.
Mitchell
,
V.
Ku
,
H.
Kim
,
E.
Duch
,
P.
Kozlowski
,
C.
D’Emic
,
V.
Narayanan
,
A.
Steegen
,
R.
Wise
,
R.
Jammy
,
R.
Rengarajan
,
H.
Ng
,
A.
Sekiguchi
, and
C. H.
Wann
,
VLSI Symp. Tech. Dig.
2004
,
186
.
5.
J. H.
Lee
,
Y. S.
Suh
,
H.
Lazar
,
R.
Jha
,
J.
Gurganus
,
Y.
Lin
, and
V.
Misra
,
Int. Elec. Dev. Meet.
2003
,
323
.
6.
G.
Bersuker
,
J.
Gutt
,
N.
Chaudhary
,
N.
Moumen
,
B. H.
Lee
,
J.
Barnett
,
S.
Gopalan
,
J.
Peterson
,
H.-J.
Li
,
P. M.
Zeitzoff
,
G. A.
Brown
,
Y.
Kim
,
C. D.
Young
,
J. H.
Sim
,
P.
Lysaght
,
M.
Garderner
,
R. W.
Murto
, and
H. R.
Huff
,
IEEE Int. Rel. Phys. Symp.
2004
,
479
.
7.
H.
Park
,
B. H.
Lee
,
M.
Gardener
, and
H.
Hwang
,
Solid State Dev. and Mat.
2004
,
746
.
8.
C. D.
Young
,
Y.
Zhao
,
M.
Pendley
,
B. H.
Lee
,
K.
Matthews
,
J. H.
Sim
,
R.
Choi
,
G.
Bersuker
, and
G.
Brown
,
Solid State Dev. and Mat.
2004
,
216
.
You do not currently have access to this content.