Improvement in bias instabilities of Hf-silicate by dilute hydrochloric acid (500:1) post-deposition rinsing and its effect after high-pressure $H2$ anneal

We report that post-deposition rinsing of metalorganic-chemical-vapor-deposited Hf-silicate dielectric with HCl (500:1) improves mobility, bias instabilities, and stress-induced leakage current of metal-oxide-semiconductor field-effect transistors. Reduction of bulk charge trapping has primarily been attributed to this improvement. High-pressure $H2$ anneal improved interface states significantly, with no effect on bulk trapping characteristics. HCl post-treatment did not show any apparent effect on interface state properties.