We have studied the electrical activation of the trap in Fe-implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the deep trap, located at . The InP substrate background doping, i.e., the Fermi-level position, plays a crucial role in the Fe activation process by setting an upper limit to the amount of Fe centers electrically activated as deep acceptor traps.
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