A new method of fabricating porous silicon emitting in the ultraviolet (UV) spectral region is presented. This method uses photoetching in an aqueous salt (KF) solution. Strong UV photoluminescence is observed at 3.3eV with a full width at a half maximum of 0.1eV, which is much narrower than those reported previously. Fourier transform infrared spectroscopy suggests that the surface oxide produced during photoetching plays an important role in the UV emission of the KF-prepared PSi.

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