A semiconductor bulk crystal has several advantages as a nonlinear optical material, such as low processing cost, long interaction length, and alleviation of the free-carrier absorption caused by two-photon absorption (TPA). We examine optical properties of semiconductor bulk crystals with different orientations at 1.55μm and find that CdTe[111] has favorable capabilities, such as nonlinear refractive index of 5.23×1017(m2W), TPA coefficient of 18.3(mmGW), and consequent figure of merit of 0.54. Optical three-dimensional measurements of reflective material are carried out using CdTe[111] as ultrafast optical Kerr shutter and clear images corresponding to surface steps are obtained.

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