The origin of the degradation with N of the threshold current density and external differential quantum efficiency of 1.29 to laser diodes is analyzed. Adding N to InGaAs leads to a reduction of the carrier injection efficiency and thus to an increase of and a decrease of . This effect is likely related to carrier recombination losses in the barriers and is independent of the N content. The optical absorption losses and the internal transparency current density are found to increase with N content, accounting for the rest of the degradation in . Modeling of the transparency carrier and radiative current densities identifies the increase of the defect-related recombination coefficient in GaInNAs as the dominant effect leading to the N dependence of .
Impact of N on the lasing characteristics of quantum well lasers emitting from 1.29 to
J. M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hugues, J. Barjon, J.-Y. Duboz, J. Massies; Impact of N on the lasing characteristics of quantum well lasers emitting from 1.29 to . Appl. Phys. Lett. 19 December 2005; 87 (25): 251109. https://doi.org/10.1063/1.2151249
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