Impact of N on the lasing characteristics of $GaInNAs∕GaAs$ quantum well lasers emitting from 1.29 to $1.52μm$

The origin of the degradation with N of the threshold current density $(Jth)$ and external differential quantum efficiency $(ηd)$ of 1.29 to $1.52μmGaInNAs∕GaAs$ laser diodes is analyzed. Adding N to InGaAs leads to a $∼25%$ reduction of the carrier injection efficiency and thus to an increase of $Jth$ and a decrease of $ηd$⁠. This effect is likely related to carrier recombination losses in the barriers and is independent of the N content. The optical absorption losses and the internal transparency current density are found to increase with N content, accounting for the rest of the degradation in $Jth$⁠. Modeling of the transparency carrier and radiative current densities identifies the increase of the defect-related recombination coefficient in GaInNAs as the dominant effect leading to the N dependence of $Jtr$⁠.