Using simulations, we have examined specific features of a hybrid n-ZnOp-AlGaN light-emitting diode (LED) operation, originated from a type-II band alignment and a negative polarization charge at the ZnOAlGaN interface. These factors are found to improve the carrier confinement near the interface and to affect significantly the light emission spectra and internal quantum efficiency of the LED. The theoretical predictions are compared with available observations.

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