Application of a dc electric field to bulk, semi-insulating, GaAs during laser irradiation was observed to significantly affect optically pumped nuclear spin polarizations. Changes to nuclear polarizations correlated with nonlinear photoconductivity, and both depended significantly on excitation photon energy. Many aspects of the data could be explained by electric field-dependent population transfer between trapped and delocalized electronic spin reservoirs. These results indicate that semi-insulating GaAs could be a platform for localized optical and electric field control of nuclear spin polarization.
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