We have investigated the growth of thin films on (100)Ge by molecular beam epitaxy. By means of transmission electron microscopy, the structural characteristics of the films grown on clean Ge surfaces are compared with those grown on passivation layers of and . The interface was found to be very flat and thin, with an interfacial layer one or two monolayer thick. However, traces of Ge in the oxide have been detected when deposited on either one of the interfacial layers, which can be explained by the instability of the interfacial layers grown with an atomic oxygen/nitrogen beam, prior to the deposition.
REFERENCES
1.
C.
Chui
, H.
Kim
, D.
Chi
, B. B.
Triplett
, P. C.
McIntyre
, and K. C.
Saraswat
, Tech. Dig. - Int. Electron Devices Meet.
2002
, 437
.2.
C. H.
Huang
, M. Y.
Yang
, A.
Chin
, W. J.
Chen
, C. X.
Zhu
, B.
Cho
, M.-F.
Li
, and D.
Kwong
, Symposium on VLSI Technology
, Kyoto
, Japan, 2003 (IEEE
, New York, 2003
), p. 119
.3.
W. P.
Bai
, N.
Lu
, J.
Liu
, A.
Ramirez
, D. L.
Kwong
, D.
Wristers
, A.
Ritenour
, L.
Lee
, and D.
Antoniadis
, Symposium on VLSI Technology
, Kyoto
, Japan, 2003 (IEEE
, New York, 2003
), p. 121
.4.
V. V.
Afanasev
and S.
Stesmans
, Appl. Phys. Lett.
84
, 2319
(2004
).5.
E. P.
Gusev
, H.
Shang
, M.
Copel
, M.
Gribelyuk
, C.
D’Emic
, P.
Kozlowski
, and T.
Zabel
, Appl. Phys. Lett.
85
, 2334
(2004
).6.
C.
Chui
, H.
Kim
, P. C.
McIntyre
, and K. C.
Saraswat
, IEEE Electron Device Lett.
25
, 274
(2004
).7.
D. W.
Wang
, Q.
Wang
, A.
Javey
, R.
Tu
, H. J.
Dai
, H.
Kim
, P. C.
McIntyre
, T.
Krishnamohan
, and K. C.
Saraswat
, Appl. Phys. Lett.
83
, 2432
(2003
).8.
J. J. H.
Chen
, N. A.
Bojarczuk
, H. L.
Shang
, M.
Copel
, J. B.
Hannon
, J.
Karasinski
, E.
Preisler
, S. K.
Banerjee
, and S.
Guha
, IEEE Trans. Electron Devices
51
, 1441
(2004
).9.
A.
Dimoulas
, G.
Mavrou
, G.
Vellianitis
, E.
Evangelou
, N.
Boukos
, M.
Houssa
, and M.
Caymax
, Appl. Phys. Lett.
86
, 032908
(2005
).10.
S.
Van Elshocht
, B.
Brijs
, M.
Caymax
, T.
Conard
, S.
De Gendt
, S.
Kubicek
, M.
Meuris
, B.
Onsia
, O.
Richard
, I.
Teerlinck
, J.
Van Steenbergen
, C.
Zhao
, and M.
Heyns
, Mater. Res. Soc. Symp. Proc.
809
, B5
–4
1
–D5
4
–1
(2004
).11.
S.
Van Elshocht
, B.
Brijs
, M.
Caymax
, T.
Conard
, T.
Chiarella
, S.
De Gendt
, B.
De Jaeger
, S.
Kubicek
, M.
Meuris
, B.
Onsia
, O.
Richard
, I.
Teerlinck
, J.
Van Steenbergen
, C.
Zhao
, and M.
Heyns
, Appl. Phys. Lett.
85
, 3824
(2004
).12.
A.
Delabie
, R. L.
Puurunen
, B.
Brijs
, M.
Caymax
, T.
Conard
, B.
Onsia
, O.
Richard
, W.
Vandervorst
, C.
Zhao
, and M. M.
Heyns
, J. Appl. Phys.
97
, 064104
(2005
).13.
K.
Kita
, K.
Kyuno
, and A.
Toriumi
, Appl. Phys. Lett.
85
, 52
(2004
).© 2005 American Institute of Physics.
2005
American Institute of Physics
You do not currently have access to this content.