The reflectance spectra of simple design GaN-based microcavities have been studied in the 5 K–300 K range. The epitaxial structure consists of the silicon substrate and the stack of buffer layers as the back mirror, a GaN active layer, and a 100 Å thick aluminium layer as the top mirror. Active layer thicknesses of , , or were investigated. The samples with GaN thicknesses and display an anticrossing behavior between the cavity and exciton modes, with measured Rabi splittings of 47 and 60 meV, respectively, both at 5 K and room temperature.
Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon
F. Semond, I. R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix, A. Vasson; Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon. Appl. Phys. Lett. 11 July 2005; 87 (2): 021102. https://doi.org/10.1063/1.1994954
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