The reflectance spectra of simple design GaN-based microcavities have been studied in the 5 K–300 K range. The epitaxial structure consists of the silicon substrate and the stack of buffer layers as the back mirror, a GaN active layer, and a 100 Å thick aluminium layer as the top mirror. Active layer thicknesses of λ2, λ, or 3λ2 were investigated. The samples with GaN thicknesses λ2 and λ display an anticrossing behavior between the cavity and exciton modes, with measured Rabi splittings of 47 and 60 meV, respectively, both at 5 K and room temperature.

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