The reflectance spectra of simple design GaN-based microcavities have been studied in the 5 K–300 K range. The epitaxial structure consists of the silicon substrate and the stack of buffer layers as the back mirror, a GaN active layer, and a 100 Å thick aluminium layer as the top mirror. Active layer thicknesses of , , or were investigated. The samples with GaN thicknesses and display an anticrossing behavior between the cavity and exciton modes, with measured Rabi splittings of 47 and 60 meV, respectively, both at 5 K and room temperature.
© 2005 American Institute of Physics.
2005
American Institute of Physics
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