We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.
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7 November 2005
Research Article|
November 03 2005
The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon
E. V. Monakhov;
E. V. Monakhov
a)
Department of Physics, Physical Electronics,
University of Oslo
, P.O. Box 1048 Blindern, N-0316 Oslo, Norway
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B. G. Svensson;
B. G. Svensson
Department of Physics, Physical Electronics,
University of Oslo
, P.O. Box 1048 Blindern, N-0316 Oslo, Norway
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M. K. Linnarsson;
M. K. Linnarsson
Royal Institute of Technology,
Lab of Materials and Semiconductor Physics
, P.O. Box Electrum 229, SE-164 40 Kista, Sweden
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A. La Magna;
A. La Magna
CNR-IMM Sezione Catania
, Stradale Primosole 50, 95121 Catania, Italy
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M. Italia;
M. Italia
CNR-IMM Sezione Catania
, Stradale Primosole 50, 95121 Catania, Italy
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V. Privitera;
V. Privitera
CNR-IMM Sezione Catania
, Stradale Primosole 50, 95121 Catania, Italy
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G. Fortunato;
G. Fortunato
IFN-CNR
, Via Cineto Romano 42, 00156 Rome, Italy
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M. Cuscunà;
M. Cuscunà
IFN-CNR
, Via Cineto Romano 42, 00156 Rome, Italy
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L. Mariucci
L. Mariucci
IFN-CNR
, Via Cineto Romano 42, 00156 Rome, Italy
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a)
Electronic mail: edouard.monakhov@fys.uio.no
Appl. Phys. Lett. 87, 192109 (2005)
Article history
Received:
June 24 2005
Accepted:
September 12 2005
Citation
E. V. Monakhov, B. G. Svensson, M. K. Linnarsson, A. La Magna, M. Italia, V. Privitera, G. Fortunato, M. Cuscunà, L. Mariucci; The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon. Appl. Phys. Lett. 7 November 2005; 87 (19): 192109. https://doi.org/10.1063/1.2126144
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