The electronic structure of elemental silicon has been studied under high pressure using high-energy Compton scattering utilizing synchrotron radiation. The experiment was realized using a special Laue monochromator and a novel assembly of compound refractive lenses. The extremely good focusing enabled us to utilize a Mao–Bell version of the Merrill–Basset diamond anvil cell with a Be gasket up to a pressure of 20 GPa. After the careful subtraction of background scattering, the Compton profile difference for the metastable Si-XII to the Si-V phase was extracted and compared with the theory. The results clearly demonstrate the feasibility and potential of the Compton scattering technique as a complementary tool in the study of electronic structure of materials under high pressure.
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7 November 2005
Research Article|
November 01 2005
Compton scattering of elemental silicon at high pressure
J. S. Tse;
J. S. Tse
a)
Department of Physics and Engineering Physics,
University of Saskatchewan
, Saskatoon, S7N 5E2, Canada
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D. D. Klug;
D. D. Klug
Steacie Institute for Molecular Sciences,
National Research Council of Canada
, Ottawa, Ontario, Canada K1A 0R5
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D. T. Jiang;
D. T. Jiang
Canadian Light Source, Incorporated, University of Saskatchewan
, Saskatoon, S7N 0X4 Canada
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C. Sternemann;
C. Sternemann
Institute of Physics/DELTA,
University of Dortmund
, D-44221 Dortmund, Germany
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M. Volmer;
M. Volmer
Institute of Physics/DELTA,
University of Dortmund
, D-44221 Dortmund, Germany
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S. Huotari;
S. Huotari
European Synchrotron Radiation Facility
, BP 220, F-38043, Grenoble, Cedex, France
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N. Hiraoka;
N. Hiraoka
European Synchrotron Radiation Facility
, BP 220, F-38043, Grenoble, Cedex, France
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V. Honkimäki;
V. Honkimäki
European Synchrotron Radiation Facility
, BP 220, F-38043, Grenoble, Cedex, France
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K. Hämäläinen
K. Hämäläinen
Division of X-ray Physics, Department of Physical Sciences,
University of Helsinki
, P.O. Box-64, FIN-00014, Helsinki, Finland
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a)
Author to whom correspondence should be addressed; electronic mail: john.tse@usask.ca
Appl. Phys. Lett. 87, 191905 (2005)
Article history
Received:
June 24 2005
Accepted:
September 12 2005
Citation
J. S. Tse, D. D. Klug, D. T. Jiang, C. Sternemann, M. Volmer, S. Huotari, N. Hiraoka, V. Honkimäki, K. Hämäläinen; Compton scattering of elemental silicon at high pressure. Appl. Phys. Lett. 7 November 2005; 87 (19): 191905. https://doi.org/10.1063/1.2126125
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