thin films were deposited by radio-frequency inductively coupled plasma-enhanced chemical vapor deposition. Postplasma treatments were used to modify the microstructure of the as-deposited thin films. Uniform nanorods with dimension of were observed in the plasma-treated films. After plasma treatments, the optimal operating temperature of the plasma-treated thin films decreased by 80 °C, while the gas sensitivity increased eightfold. The enhanced gas sensing properties of the plasma-treated thin film were believed to result from the large surface-to-volume ratio of the nanorods’ tiny grain size in the scale comparable to the space-charge length and its unique microstructure of nanorods rooted in thin films.
Semiconductor gas sensor based on tin oxide nanorods prepared by plasma-enhanced chemical vapor deposition with postplasma treatment
Hui Huang, O. K. Tan, Y. C. Lee, T. D. Tran, M. S. Tse, X. Yao; Semiconductor gas sensor based on tin oxide nanorods prepared by plasma-enhanced chemical vapor deposition with postplasma treatment. Appl. Phys. Lett. 17 October 2005; 87 (16): 163123. https://doi.org/10.1063/1.2106006
Download citation file: