We report the formation of gallium nitride (GaN) microcavities by manipulating a photoenhanced oxidation rate difference between the polar and nonpolar crystallographic planes of GaN. When immersed in a buffered acetic electrolyte of at room temperature, it is shown that the photo-oxidation can proceed at a rate that is one order of magnitude slower on the nonpolar plane of than on the polar plane of due to the reduced surface field action. Gallium nitride microcavities bounded by optically smooth and facets can thus be preferentially formed on the -plane sapphire substrate after dissolving the oxide layer. The optical properties of these GaN hexagonal cavities reveal characteristic peaks of whispering gallery modes in resonance with the GaN band edge emission spectrum. A typical cavity factor of is observed in these GaN microcavities due to a reduced optical scattering loss in the wet chemical reaction process.
Skip Nav Destination
Article navigation
17 October 2005
Research Article|
October 10 2005
Gallium nitride microcavities formed by photoenhanced wet oxidation
L.-H. Peng;
L.-H. Peng
a)
Department of Electrical Engineering and Institute of Electro-Optical Engineering,
National Taiwan University
, Taipei, Taiwan, Republic of China
Search for other works by this author on:
C.-Y. Lu;
C.-Y. Lu
Department of Electrical Engineering and Institute of Electro-Optical Engineering,
National Taiwan University
, Taipei, Taiwan, Republic of China
Search for other works by this author on:
W.-H. Wu;
W.-H. Wu
Department of Electrical Engineering and Institute of Electro-Optical Engineering,
National Taiwan University
, Taipei, Taiwan, Republic of China
Search for other works by this author on:
S.-L. Wang
S.-L. Wang
Department of Electrical Engineering and Institute of Electro-Optical Engineering,
National Taiwan University
, Taipei, Taiwan, Republic of China
Search for other works by this author on:
a)
Electronic mail: [email protected]
Appl. Phys. Lett. 87, 161902 (2005)
Article history
Received:
June 22 2005
Accepted:
August 23 2005
Citation
L.-H. Peng, C.-Y. Lu, W.-H. Wu, S.-L. Wang; Gallium nitride microcavities formed by photoenhanced wet oxidation. Appl. Phys. Lett. 17 October 2005; 87 (16): 161902. https://doi.org/10.1063/1.2103423
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Related Content
Photoemission study of nitric oxide adsorption on (110) gallium arsenide
J. Vac. Sci. Technol. A (July 1987)
Transverse acoustoelectric voltage (TAV) spectroscopy of gallium phosphide, indium arsenide and cadmium sulphide–nickel chloride
J. Vac. Sci. Technol. (September 1979)
Compositional and electrical properties of Si metal–oxide–semiconductor structure prepared by direct photoenhanced chemical vapor deposition using a deuterium lamp
J. Vac. Sci. Technol. A (March 1995)
Low leakage current optically gated silicon field emitter arrays
J. Vac. Sci. Technol. B (February 2003)
Laser‐induced selected area epitaxy of CdTe and HgTe
J. Vac. Sci. Technol. A (March 1990)