We propose an application of spectroscopic ellipsometry pertinent to the characterization of nanostructure inclination of oblique thin films. This technique is employed ex situ in the measurement of silicon thin films fabricated at oblique incidence and modeled as aggregate microstructures formed from amorphous silicon, silicon oxide, and void in the effective medium model. The technique may also be utilized in situ as a powerful probe for the characterization of oblique thin films during their fabrication and processing.

1.
H. V.
Nguyen
,
Y.
Lu
,
S.
Kim
,
M.
Wakagi
, and
R. W.
Collins
,
Phys. Rev. Lett.
74
,
3880
(
1995
).
2.
R. S.
Sirohi
,
Appl. Opt.
8
,
483
(
1969
).
3.
J. W.
van der Eb
,
A. B.
Kuz’menko
, and
D.
van der Marel
,
Phys. Rev. Lett.
86
,
3407
(
2001
).
4.
B.
Hong
,
M.
Wakagi
,
W.
Drawl
,
R.
Messier
, and
R. W.
Collins
,
Phys. Rev. Lett.
75
,
1122
(
1995
).
5.
T. E.
Tiwald
,
D. W.
Thompson
, and
J. A.
Woollam
,
J. Vac. Sci. Technol. B
16
,
312
(
1998
).
6.
7.
C.
Chen
,
I.
An
, and
R. W.
Collins
,
Phys. Rev. Lett.
90
,
217402
(
2003
).
8.
D. A. G.
Bruggeman
,
Ann. Phys.
24
,
635
(
1935
);
G. B.
Smith
,
Opt. Commun.
71
,
279
(
1989
).
9.
T.
Ozue
,
M.
Kondo
,
Y.
Soda
,
S.
Fukuda
,
S.
Onodera
, and
T.
Kawana
,
IEEE Trans. Magn.
38
,
138
(
2002
).
10.
A.
McIntosh
,
M.
Robertson
,
K.
Robbie
, and
M.
Riehle
, European Cells and Materials
6
,
44
(
2003
).
11.
A. J.
McPhum
,
Q. H.
Wu
, and
I. J.
Hodgkinson
,
Electron. Lett.
34
,
360
(
1998
).
12.
R.
Hezel
,
Sol. Energy Mater. Sol. Cells
74
,
25
(
2002
).
13.
L.
Abelmann
and
C.
Lodder
,
Thin Solid Films
305
,
1
(
1997
).
14.
K.
Robbie
,
G.
Beydaghyan
,
T.
Brown
,
C.
Dean
,
J.
Adams
, and
C.
Buzea
,
Rev. Sci. Instrum.
75
,
1089
(
2004
).
15.
H. G.
Tompkins
, A User’s Guide to Ellipsometry (
Academic
, San Diego, CA,
1993
).
16.
H.
Goldstein
,
Classical Mechanics
(
Addison-Wesley
, Phillipines,
1980
).
17.
K.
Kaminska
,
A.
Amassian
,
L.
Martinu
, and
K.
Robbie
,
J. Appl. Phys.
97
,
013511
(
2005
).
18.
I. J.
Hodgkinson
and
Q. H.
Wu
,
Birefringent Thin Films and Polarizing Elements
(
World Scientific
, Singapore,
1997
), p.
150
.
19.
C.
Buzea
and
K.
Robbie
,
J. Optoel. Adv. Mater.
6
,
1251
(
2004
).
20.

One most note that the lack of optical absorption in silicon oxide within the spectral range of SE measurements makes it difficult to distinguish between oxidized silicon and void in the effective medium model.

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