An integrated process to fabricate controllable arrays of semiconductor nanorings and nanodots on patterned surfaces is presented. This approach is based on pattern transfer of nanopores to a layer, followed by selective epitaxial growth of InGaN onto an underlying GaN substrate using metalorganic chemical vapor deposition. Using this approach, crystalline InGaN nanorings and nanodots in diameter have been grown on GaN surfaces. The formation mechanism of the nanorings and nanodots is described based on the initial stage of selective growth and restricted atom migration in a confined hole. Strong photoluminescence obtained at room temperature from the noncapped nanorings indicates strong confinement of the excitons in the nanostructures. This approach enables fabrication of dense, uniform arrays of epitaxial nanostructures and is potentially applicable to a variety of materials systems.
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3 October 2005
Research Article|
September 30 2005
InGaN nanorings and nanodots by selective area epitaxy Available to Purchase
P. Chen;
P. Chen
Institute of Material Research and Engineering
, 3 Research Link, Singapore 117602
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S. J. Chua;
S. J. Chua
a)
Institute of Material Research and Engineering
, 3 Research Link, Singapore 117602
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Y. D. Wang;
Y. D. Wang
Singapore-MIT Alliance
, E4-04-10, 4 Engineering Drive 3, Singapore 117567
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M. D. Sander;
M. D. Sander
Institute of Material Research and Engineering
, 3 Research Link, Singapore 117602
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C. G. Fonstad
C. G. Fonstad
Department of Electrical and Computer Science,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139-4307
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P. Chen
Institute of Material Research and Engineering
, 3 Research Link, Singapore 117602
S. J. Chua
a)
Institute of Material Research and Engineering
, 3 Research Link, Singapore 117602
Y. D. Wang
Singapore-MIT Alliance
, E4-04-10, 4 Engineering Drive 3, Singapore 117567
M. D. Sander
Institute of Material Research and Engineering
, 3 Research Link, Singapore 117602
C. G. Fonstad
Department of Electrical and Computer Science,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139-4307a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
Appl. Phys. Lett. 87, 143111 (2005)
Article history
Received:
March 22 2005
Accepted:
July 26 2005
Citation
P. Chen, S. J. Chua, Y. D. Wang, M. D. Sander, C. G. Fonstad; InGaN nanorings and nanodots by selective area epitaxy. Appl. Phys. Lett. 3 October 2005; 87 (14): 143111. https://doi.org/10.1063/1.2056584
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