Drift mobility in 4H-SiC Schottky diodes

In this work, the temperature dependence of the mobility along the $c$ axis in 4H-SiC was determined from the current voltage $(I‐V)$ characteristics of Schottky diodes in the temperature range 80–700 K. The procedure used series resistance measurements in Schottky diodes for extracting the mobility values in the epitaxial layer. For a dopant concentration of $1.2×1016cm−3$⁠, at room temperature, a mobility value of $724cm2∕(Vs)$ was found, which decreased to $48.6cm2∕(Vs)$ at 700 K. In the temperature range 200–700 K, a dependence of the mobility as $T−3$ was determined.