Metal-oxide-semiconductor field-effect-transistors using atomic-layer-deposited (ALD) as the gate dielectric are fabricated on the heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from , virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the dielectric formed by plasma-enhanced chemical-vapor-deposition.
REFERENCES
1.
G. D.
Wilk
, R. M.
Wallace
, and J. M.
Anthony
, J. Appl. Phys.
89
, 5243
(2001
).2.
For a recent review of high mobility Si and Ge structures, see, for example,
F.
Schäffler
, Semicond. Sci. Technol.
12
, 1515
(1997
).3.
R. B.
Dunford
, R.
Newbury
, F. F.
Fang
, R. G.
Clark
, R. P.
Starrett
, J. O.
Chu
, K. E.
Ismail
, and B. S.
Meyerson
, Solid State Commun.
96
, 57
(1995
).4.
K.
Lai
, W.
Pan
, D. C.
Tsui
, S. A.
Lyon
, M.
Mühlberger
, and F.
Schäffler
, Phys. Rev. Lett.
93
, 156805
(2004
).5.
E. B.
Olshanetsky
, V.
Renard
, Z. D.
Kvon
, J. C.
Portal
, N. J.
Woods
, J.
Zhang
, and J. J.
Harris
, Phys. Rev. B
68
, 085304
(2003
).6.
K.
Lai
, W.
Pan
, T. C.
Tsui
, and Y. H.
Xie
, Appl. Phys. Lett.
84
, 302
(2004
).7.
K.
Lai
, W.
Pan
, D. C.
Tsui
, S. A.
Lyon
, M.
Mühlberger
, and F.
Schäffler
, Phys. Rev. B
72
, 081313
(2005
).8.
K.
Ismail
, M.
Arafa
, F.
Stern
, J. O.
Chu
, and B. S.
Meyerson
, Appl. Phys. Lett.
66
, 842
(1995
).9.
R. B.
Dunford
, N.
Griffin
, D. J.
Paul
, M.
Pepper
, D. J.
Robbins
, A. C.
Churchill
, and W. Y.
Leong
, Thin Solid Films
369
, 316
(2000
).10.
P. D.
Ye
, G. D.
Wilk
, J.
Kwo
, B.
Yang
, H.-J. L.
Gossmann
, M.
Frei
, S. N. G.
Chu
, J. P.
Mannaerts
, M.
Sergent
, M.
Hong
, K. K.
Ng
, and J.
Bude
, IEEE Electron Device Lett.
24
, 209
(2003
).© 2005 American Institute of Physics.
2005
American Institute of Physics
You do not currently have access to this content.