The growth of heterostructure on Si (001) substrates by molecular-beam epitaxy using ammonia as nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructures are assessed. It is shown that a two-dimensional electron gas is formed at the interface. This type of heterostructure exhibits a sheet carrier density of with a mobility of at room temperature. Preliminary results concerning high-electron-mobility-transistor static characteristics are presented.
High-electron-mobility heterostructures grown on Si(001) by molecular-beam epitaxy
S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, J. Massies; High-electron-mobility heterostructures grown on Si(001) by molecular-beam epitaxy. Appl. Phys. Lett. 26 September 2005; 87 (13): 133505. https://doi.org/10.1063/1.2067698
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