The growth of heterostructure on Si (001) substrates by molecular-beam epitaxy using ammonia as nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructures are assessed. It is shown that a two-dimensional electron gas is formed at the interface. This type of heterostructure exhibits a sheet carrier density of with a mobility of at room temperature. Preliminary results concerning high-electron-mobility-transistor static characteristics are presented.
© 2005 American Institute of Physics.
2005
American Institute of Physics
You do not currently have access to this content.