The growth of AlGaNGaN heterostructure on Si (001) substrates by molecular-beam epitaxy using ammonia as nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructures are assessed. It is shown that a two-dimensional electron gas is formed at the Al0.23Ga0.77NGaN interface. This type of heterostructure exhibits a sheet carrier density of 4.2×1012cm2 with a mobility of 730cm2Vs at room temperature. Preliminary results concerning high-electron-mobility-transistor static characteristics are presented.

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