Continuous wave laser operation at 25°C, with simultaneous electrical gain, of an InGaP–GaAs heterojunction bipolar transistor laser, with AlGaAs optical confining layers and an InGaAs recombination quantum well incorporated into the p-type base region, is demonstrated. At laser threshold (IB=40mA, VCB=0, 25°C), the transistor current gain β=ΔICΔIB in common-emitter operation changes abruptly (2.31.2,β>1), with laser modes developing at wavelength λ1006nm. Direct three-port modulation of the transistor laser at 3GHz is demonstrated for a device with a 2.2μm emitter width and a 850μm length between cleaved Fabry–Perot facets (which is the performance of an exploratory device and not near the limits).

1.
J.
Bardeen
and
W. H.
Brattain
,
Phys. Rev.
74
,
230
(
1948
).
2.
M.
Feng
,
N.
Holonyak
, Jr.
, and
W.
Hafez
,
Appl. Phys. Lett.
84
,
151
(
2004
).
3.
M.
Feng
,
N.
Holonyak
, Jr.
, and
R.
Chan
,
Appl. Phys. Lett.
84
,
1952
(
2004
).
4.
G.
Walter
,
N.
Holonyak
, Jr.
,
M.
Feng
, and
R.
Chan
,
Appl. Phys. Lett.
85
,
4768
(
2004
).
5.
R.
Chan
,
M.
Feng
,
N.
Holonyak
, Jr.
, and
G.
Walter
,
Appl. Phys. Lett.
86
,
131114
(
2005
).
6.
J. M.
Dallesasse
,
N.
Holonyak
, Jr.
,
A. R.
Sugg
,
T. A.
Richard
, and
N.
El-Zein
,
Appl. Phys. Lett.
57
,
2844
(
1990
).
7.
S. A.
Maranowski
,
A. R.
Sugg
,
E. I.
Chen
, and
N.
Holonyak
, Jr.
,
Appl. Phys. Lett.
63
,
1660
(
1993
).
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