Continuous wave laser operation at , with simultaneous electrical gain, of an InGaP–GaAs heterojunction bipolar transistor laser, with AlGaAs optical confining layers and an InGaAs recombination quantum well incorporated into the -type base region, is demonstrated. At laser threshold (, , ), the transistor current gain in common-emitter operation changes abruptly , with laser modes developing at wavelength . Direct three-port modulation of the transistor laser at is demonstrated for a device with a emitter width and a length between cleaved Fabry–Perot facets (which is the performance of an exploratory device and not near the limits).
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Research Article| September 20 2005
Room temperature continuous wave operation of a heterojunction bipolar transistor laser
N. Holonyak, Jr.;
M. Feng, N. Holonyak, G. Walter, R. Chan; Room temperature continuous wave operation of a heterojunction bipolar transistor laser. Appl. Phys. Lett. 26 September 2005; 87 (13): 131103. https://doi.org/10.1063/1.2058213
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