Nanopillar transistors exhibiting single-electron quantum effects at room temperature

A nanoelectronic device consisting of a $SiNx∕Si∕SiNx$ nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at $300K$⁠. The device features an ultrasmall quantum dot of size $∼10×10×3nm3$ and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength $α$ by comparison of the peak spacing in the current-voltage $(I-V)$ characteristics of $Id−Vd$ and $Id−Vg$ at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.