Threshold voltage (VTH) instability in metal oxide semiconductor field transistors (MOSFETs) with high dielectric constant (k) gate dielectrics has been investigated with an inversion pulse measurement technique, which can detect fast dielectric charging/discharging within microseconds (μs). The results indicate that VTH instability can be significantly underestimated by conventional VTH measurement techniques. Based on temperature-dependent stress data, it is suggested that charging and discharging are determined by direct tunneling and thermally assisted processes, respectively.

1.
A. L.P.
Rotondaro
,
M. R.
Visokay
,
A.
Shanware
,
J. J.
Chambers
, and
L.
Colombo
,
IEEE Electron Device Lett.
23
,
603
(
2002
).
2.
K.
Onishi
,
C. S.
Kang
,
R.
Choi
,
H.-J.
Cho
,
S.
Gopalan
,
R.
Nieh
,
S.
Krishnan
, and
J. C.
Lee
, in
2002 IEEE International Reliability Physics Symposium Proceedings
,
419
(
2002
).
3.
S.
Zafar
,
A.
Callegari
,
E.
Gusev
, and
M. V.
Fischetti
,
J. Appl. Phys.
93
,
9298
(
2003
).
4.
B. H.
Lee
,
C. D.
Young
,
R.
Choi
,
Tech. Dig. - Int. Electron Devices Meet.
859
(
2004
).
5.
R.
Choi
,
S. J.
Rhee
,
J. C.
Lee
,
B. H.
Lee
, and
G.
Bersuker
,
IEEE Electron Device Lett.
26
,
197
(
2005
).
6.
C. D.
Young
,
Y.
Zhao
,
M.
Pendley
,
B. H.
Lee
,
K.
Matthews
,
J. H.
Sim
,
R.
Choi
,
G.
Bersuker
,
G.
Brown
,
R. W.
Murto
, and
G.
Bersuker
,
Jpn. J. Appl. Phys., Part 1
44
,
2437
(
2004
).
7.
C.
Shen
,
M. F.
Li
,
X. P.
Wang
,
H. Y.
Yu
,
Y. P.
Feng
,
A. T.
Lim
,
Y. C.
Yeo
,
D. S.H.
Chan
, and
D. L.
Kwong
,
Tech. Dig. - Int. Electron Devices Meet.
733
(
2004
).
8.
A.
Kreber
,
E.
Cartier
,
L.
Pantisano
,
M.
Rosmeulen
,
R.
Degraeve
,
T.
Kauerauf
,
G.
Groeseneken
,
H. E.
Maes
and
U.
Schwalke
, in
2003 IEEE International Reliability Physics Symposium Proceedings
,
41
(
2003
).
9.
G.
Bersuker
,
J. H.
Sim
,
C. D.
Young
,
R.
Choi
,
B. H.
Lee
,
P.
Lysaght
,
G. A.
Brown
,
P. M.
Zeitzoff
,
M.
Gardner
,
R. W.
Murto
, and
H. R.
Huff
,
Mater. Res. Soc. Symp. Proc.
811
,
31
(
2004
).
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