High electron mobility W-doped $In2O3$ thin films by pulsed laser deposition

High electron mobility thin films of $In2−xWxO3+y(0⩽x⩽0.075)$ were prepared on amorphous $SiO2$ and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and $112cm2∕Vs$ depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of $x∼0.03$⁠. A small band gap shift was detected from films with increasing electron carrier density; the electron effective mass calculated from Burstein-Moss theory was $0.3me$⁠. $In2−xWxO3+y$ films have high visible transmittance of $∼80%$⁠.