The intensity of Eu-related luminescence from ion-implanted GaN with a thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at . Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to , , and transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at , and a broad subedge absorption band centred at . Marked differences in the shape of the PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different centers with different excitation mechanisms.
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12 September 2005
Research Article|
September 08 2005
Selectively excited photoluminescence from Eu-implanted GaN
K. Wang;
K. Wang
Department of Physics,
University of Strathclyde
, Glasgow G4 0NG, United Kingdom
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R. W. Martin;
R. W. Martin
Department of Physics,
University of Strathclyde
, Glasgow G4 0NG, United Kingdom
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K. P. O’Donnell;
K. P. O’Donnell
Department of Physics,
University of Strathclyde
, Glasgow G4 0NG, United Kingdom
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V. Katchkanov;
V. Katchkanov
Department of Physics,
University of Strathclyde
, Glasgow G4 0NG, United Kingdom
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E. Nogales;
E. Nogales
Department of Physics,
University of Strathclyde
, Glasgow G4 0NG, United Kingdom
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K. Lorenz;
K. Lorenz
ITN,
Estrada Nacional 10
, 2686-953 Sacavém, Portugal
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E. Alves;
E. Alves
ITN,
Estrada Nacional 10
, 2686-953 Sacavém, Portugal
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S. Ruffenach;
S. Ruffenach
GES,
Université de Montpellier II
, 34095 Montpellier, France
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O. Briot
O. Briot
GES,
Université de Montpellier II
, 34095 Montpellier, France
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Appl. Phys. Lett. 87, 112107 (2005)
Article history
Received:
April 12 2005
Accepted:
July 25 2005
Citation
K. Wang, R. W. Martin, K. P. O’Donnell, V. Katchkanov, E. Nogales, K. Lorenz, E. Alves, S. Ruffenach, O. Briot; Selectively excited photoluminescence from Eu-implanted GaN. Appl. Phys. Lett. 12 September 2005; 87 (11): 112107. https://doi.org/10.1063/1.2045551
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