We have grown InP quantum dots in GaInP by gas-source molecular-beam epitaxy on sharp tips etched out of a GaAs substrate. The growth parameters were optimized to produce single quantum dots on the tips, predominantly at the edges. Intensity correlation measurements of the fluorescence from single dots on these tips reveal antibunched photon emision. We propose to use these tip structures with stable single photon emitters at their apex as active probes for further controlled experiments in quantum and nano-optics.

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