High dielectric constant materials are being developed as possible replacements for as the gate dielectric. Although these materials do overcome the issue of gate leakage current because of increased thickness for a given equivalent capacitance, several other problems arise, such as degraded carrier mobility and higher low-frequency noise due to increased fixed charges and traps in the high- film. HfSiON gate-dielectric metal-oxide-semiconductor field-effect transistors (MOSFETs), presented here, offer lower noise compared to other high- materials, but the noise levels are relatively higher than in devices. Oxide-trap-induced correlated carrier number-mobility fluctuations dominate in all of these devices. Measured noise characteristics as well as extracted oxide trap density values are discussed for various geometries and sizes. The latter, measured to be , is higher than that for MOSFETs with similar dimensions . This work represents an investigation of interface generated flicker noise on HfSiON gate stacks.
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21 February 2005
Research Article|
February 16 2005
Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors
Bigang Min;
Bigang Min
Department of Electrical Engineering, University of Texas at Arlington
, P.O. Box 19016, Arlington, Texas 76019
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Siva Prasad Devireddy;
Siva Prasad Devireddy
Department of Electrical Engineering, University of Texas at Arlington
, P.O. Box 19016, Arlington, Texas 76019
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Zeynep Çelik-Butler;
Zeynep Çelik-Butler
a)
Department of Electrical Engineering, University of Texas at Arlington
, P.O. Box 19016, Arlington, Texas 76019
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Ajit Shanware;
Ajit Shanware
Texas Instruments, Inc.
, Dallas, Texas 75243
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Keith Green;
Keith Green
Texas Instruments, Inc.
, Dallas, Texas 75243
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J. J. Chambers;
J. J. Chambers
Texas Instruments, Inc.
, Dallas, Texas 75243
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M. V. Visokay;
M. V. Visokay
Texas Instruments, Inc.
, Dallas, Texas 75243
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Luigi Colombo
Luigi Colombo
Texas Instruments, Inc.
, Dallas, Texas 75243
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
Appl. Phys. Lett. 86, 082102 (2005)
Article history
Received:
September 17 2004
Accepted:
December 21 2004
Citation
Bigang Min, Siva Prasad Devireddy, Zeynep Çelik-Butler, Ajit Shanware, Keith Green, J. J. Chambers, M. V. Visokay, Luigi Colombo; Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors. Appl. Phys. Lett. 21 February 2005; 86 (8): 082102. https://doi.org/10.1063/1.1866507
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