Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers

The conjugated effect of growth temperature and in situ thermal annealing on the photoluminescence properties of $In0.4Ga0.6As0.985N0.015$/GaAs quantum wells (QWs) grown by molecular-beam epitaxy has been investigated. The interplay between growth temperature and annealing effects is such as the optimum growth temperature is not the same for as-grown and annealed samples. By using the combination of a low growth temperature and a high in situ annealing temperature, separate confinement heterostructure laser diodes with a single $In0.4Ga0.6As1−xNx$ $(x=0.015–0.021)$/GaAs QW have been grown. The broad area devices emit from 1.34 to 1.44 μm at room temperature with a threshold current density of $1500–1755A∕cm2$⁠.