The conjugated effect of growth temperature and in situ thermal annealing on the photoluminescence properties of In0.4Ga0.6As0.985N0.015/GaAs quantum wells (QWs) grown by molecular-beam epitaxy has been investigated. The interplay between growth temperature and annealing effects is such as the optimum growth temperature is not the same for as-grown and annealed samples. By using the combination of a low growth temperature and a high in situ annealing temperature, separate confinement heterostructure laser diodes with a single In0.4Ga0.6As1xNx(x=0.0150.021)/GaAs QW have been grown. The broad area devices emit from 1.34 to 1.44 μm at room temperature with a threshold current density of 15001755Acm2.

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