The conjugated effect of growth temperature and in situ thermal annealing on the photoluminescence properties of /GaAs quantum wells (QWs) grown by molecular-beam epitaxy has been investigated. The interplay between growth temperature and annealing effects is such as the optimum growth temperature is not the same for as-grown and annealed samples. By using the combination of a low growth temperature and a high in situ annealing temperature, separate confinement heterostructure laser diodes with a single /GaAs QW have been grown. The broad area devices emit from 1.34 to 1.44 μm at room temperature with a threshold current density of .
Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers
B. Damilano, J. Barjon, J.-Y. Duboz, J. Massies, A. Hierro, J.-M. Ulloa, E. Calleja; Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers. Appl. Phys. Lett. 14 February 2005; 86 (7): 071105. https://doi.org/10.1063/1.1863433
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