We have analyzed the photoresponse of solar blind Schottky barrier photodiodes below the alloy band gap energy, in the range, and we show that it is dominated by internal photoemission. The -type Schottky barrier height is shown to increase linearly with the band gap energy of the alloy. The amplitude of the internal photoemission signal is about 20 times smaller than the value given by the Fowler theory based on a free electron model. We explain this result by taking into account the interband transitions and the ballistic transport of photoexcited electrons in the metal. This low value of internal photoemission allows us to achieve a spectral rejection ratio between 280 and of more than 3 decades.
REFERENCES
1.
B.
Gil
, Group III Nitride Semiconductor Compounds: Physics and Application
(Clarendon
, Oxford, 1998
);E.
Munoz
, E.
Monroy
, J. L.
Pau
, F.
Calle
, F.
Omnes
, and P.
Gibart
, J. Phys.: Condens. Matter
32
, 7115
(2001
);F.
Omnes
and E.
Monroy
, Nitride Semiconductors, Handbook on Materials and Devices
, edited by P.
Ruterana
, M.
Albrecht
, and J.
Neugebauer
(Wiley-VCH
, New York 2003
).2.
P.
Lamarre
, A.
Hairston
, S. P.
Tobin
, K. K.
Wong
, A. K.
Sood
, M. B.
Reine
, M.
Pophristic
, R.
Birkham
, I. T.
Ferguson
, R.
Singh
, C. R.
Eddy
, Jr., U.
Chowdhury
, M. M.
Wong
, R. D.
Dupuis
, P.
Kozodoy
, and E. J.
Tarsa
, Phys. Status Solidi A
188
, 289
(2001
).3.
A.
Hirano
, C.
Pernot
, M.
Iwaya
, T.
Detchprohm
, H.
Amano
, and I.
Akasaki
, Phys. Status Solidi A
188
, 293
(2001
).4.
M.
Mosca
, J.-L.
Reverchon
, F.
Omnès
, and J.-Y.
Duboz
, J. Appl. Phys.
95
, 4367
(2004
).5.
M.
Mosca
, J.-L.
Reverchon
, N.
Grandjean
, F.
Omnès
, J.-Y.
Duboz
, I.
Ribet
, and M.
Tauvy
, Mater. Res. Soc. Symp. Proc.
764
, 315
(2003
);J.-Y.
Duboz
, J.-L.
Reverchon
, M.
Mosca
, N.
Grandjean
, and F.
Omnes
, Mater. Res. Soc. Symp. Proc.
798
, 47
(2004
);M.
Mosca
, J.-L.
Reverchon
, N.
Grandjean
, F.
Omnès
, and J.-Y.
Duboz
, IEEE J. Sel. Top. Quantum Electron.
10
, 752
(2004
).6.
E.
Monroy
, F.
Calle
, J. L.
Pau
, F. J.
Sanchez
, E.
Munoz
, F.
Omnes
, B.
Beaumont
, and P.
Gibard
, J. Appl. Phys.
88
, 2081
(2000
).7.
N.
Biyicli
, O.
Aytur
, I.
Kimugin
, T.
Tut
, and E.
Ozbay
, Appl. Phys. Lett.
81
, 3272
(2002
).8.
R. H.
Fowler
, Phys. Rev.
38
, 45
(1931
);J. M.
Mooney
and J.
Silverman
, IEEE Trans. Electron Devices
32
, 33
(1985
).9.
F.
Binet
, J. Y.
Duboz
, N.
Laurent
, E.
Rosencher
, O.
Briot
, and R. L.
Aulombard
, J. Appl. Phys.
81
, 6449
(1997
).10.
L. S.
Yu
, Q. J.
Xing
, D.
Qiao
, S. S.
Lau
, K. S.
Boutros
, and J. M.
Redwing
, Appl. Phys. Lett.
73
, 3917
(1998
).11.
D.
Qiao
, L. S.
Yu
, S. S.
Lau
, J. M.
Redwing
, J. Y.
Lin
, and H. X.
Jiang
, J. Appl. Phys.
87
, 801
(2000
);L. S.
Yu
, J.
Xing
, D.
Qiao
, S. S.
Lau
, K. S.
Boutros
, and J. M.
Redwing
, J. Appl. Phys.
73
, 3917
(1998
).12.
J. Y.
Duboz
, P. A.
Badoz
, F.
Arnaud d’Avitaya
, and E.
Rosencher
, Phys. Rev. B
40
, 10607
(1989
).13.
E.
Monroy
, F.
Calle
, T.
Palacios
, J.
Sanchez-Osorio
, M.
Verdu
, F. J.
Sanchez
, M. T.
Montojo
, F.
Omnes
, Z.
Bougrioua
, I.
Moerman
, and P.
Ruterana
, Phys. Status Solidi A
188
, 367
(2001
).14.
M. R. H.
Khan
, H.
Nakayama
, T.
Detchprohm
, K.
Hiramatsu
, and N.
Swaki
, Solid-State Electron.
41
, 287
(1997
).15.
Note that the nonlinear variation reported in Ref. 6 extrapolated to content higher than 35% would lead to unrealistically large Schottky barrier heights. The nonlinearity is thus slightly overestimated which can be explained by the limited accuracy of current or capacitance versus voltage measurement.
16.
17.
C. R.
Crowell
, W. G.
Spitzer
, L. E.
Howarth
, and E. E.
Labate
, Phys. Rev.
127
, 2006
(1962
);18.
J. Y.
Duboz
and P. A.
Badoz
, Phys. Rev. B
44
, 8061
(1991
).19.
J. J.
Quinn
and R. A.
Ferrel
, Phys. Rev.
112
, 812
(1958
).© 2005 American Institute of Physics.
2005
American Institute of Physics
You do not currently have access to this content.
