Tracing deeply buried $InAs∕GaAs$ quantum dots using atomic force microscopy and wet chemical etching Available to Purchase

We present cross-sectional atomic-force-microscope measurements of buried self-assembled quantum dots. The used method needs a minimum of time and sample preparation (cleaving and etching) to obtain the dot density, dot distribution, and give an estimate of the dot dimensions. Etching only the cleaved surface of the sample opens up the opportunity to determine the properties of a buried dot layer before or even after device fabrication.