The electrical and optical characteristics of a AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the -type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry.
REFERENCES
1.
T.
Mukai
, M.
Yamada
, and S.
Nakamura
, Jpn. J. Appl. Phys., Part 1
38
, 3976
(1999
).2.
D.
Morita
, M.
Sano
, M.
Yamamoto
, T.
Murayama
, S.
Nagahama
, and T.
Mukai
, Jpn. J. Appl. Phys., Part 1
41
, 1434
(2002
).3.
Y.-L.
Pan
, V.
Boutou
, R. K.
Chang
, I.
Ozden
, K.
Davitt
, and A. V.
Nurmikko
, Opt. Lett.
28
, 1707
(2003
).4.
T.
Wang
, Y. H.
Liu
, Y. B.
Lee
, Y.
Izumi
, J. P.
Ao
, J.
Bai
, H. D.
Li
, and S.
Sakai
, J. Cryst. Growth
235
, 177
(2002
).5.
E. L.
Waldron
, J. W.
Graff
, and E. F.
Schubert
, Appl. Phys. Lett.
79
, 2737
(2001
).6.
H. W.
Choi
, M. D.
Dawson
, P. R.
Edwards
, and R. W.
Martin
, Appl. Phys. Lett.
83
, 4483
(2003
).7.
H. W.
Choi
, C. W.
Jeon
, M. D.
Dawson
, P. R.
Edwards
, R. W.
Martin
, and S.
Tripathy
, J. Appl. Phys.
93
, 5978
(2003
).8.
X.
Guo
and E. F.
Schubert
, Appl. Phys. Lett.
78
, 3337
(2001
).9.
E. L.
Waldron
, Y.-L.
Li
, E. F.
Schubert
, J. W.
Graff
, and J. K.
Sheu
, Appl. Phys. Lett.
83
, 4975
(2003
).10.
A.
Chitnis
, V.
Adivarahan
, M.
Shatalov
, J.
Zhang
, M.
Gaevski
, W.
Shuai
, R.
Pachipulusu
, J.
Sun
, K.
Simin
, G.
Simin
, J. W.
Yang
, and M. A.
Khan
, Jpn. J. Appl. Phys., Part 1
41
, L320
(2002
).© 2005 American Institute of Physics.
2005
American Institute of Physics
You do not currently have access to this content.