A heterojunction composed of (CMO) and Nb-doped (STON) was fabricated and its properties were studied and compared with /STON and /STON p-n, junctions. This CMO/STON junction exhibits an asymmetric current–voltage relation similar to a p-n junction. The most remarkable discovery is that the magnetic state of the manganites has a strong impact on the rectifying behaviors. The diffusion voltage, which is the critical voltage for the current rush, shows a tendency to decrease/increase with the establishment of the antiferromagnetic/ferromagnetic order in the manganites of the junction. Similar to other manganite p-n junctions, CMO/STON also exhibits a significant photovoltaic effect, and the maximum photovoltage is under the illumination of light . A qualitative explanation is given based on an analysis on the band diagram of the junctions.
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31 January 2005
Research Article|
January 27 2005
Rectifying and photovoltaic properties of the heterojunction composed of and Nb-doped Available to Purchase
J. R. Sun;
J. R. Sun
a)
State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences
, Beijing 100080, People’s Republic of China
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S. Y. Zhang;
S. Y. Zhang
State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences
, Beijing 100080, People’s Republic of China
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B. G. Shen;
B. G. Shen
State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences
, Beijing 100080, People’s Republic of China
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H. K. Wong
H. K. Wong
Department of Physics, The Chinese University of Hong Kong
, Hong Kong, China
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J. R. Sun
a)
S. Y. Zhang
B. G. Shen
H. K. Wong
State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences
, Beijing 100080, People’s Republic of Chinaa)
Electronic mail: [email protected]
Appl. Phys. Lett. 86, 053503 (2005)
Article history
Received:
July 06 2004
Accepted:
December 17 2004
Citation
J. R. Sun, S. Y. Zhang, B. G. Shen, H. K. Wong; Rectifying and photovoltaic properties of the heterojunction composed of and Nb-doped . Appl. Phys. Lett. 31 January 2005; 86 (5): 053503. https://doi.org/10.1063/1.1861112
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