The electron transport through single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces has been investigated by using metallic leads with narrow gaps. Clear Coulomb staircases and Coulomb gaps have been observed at . Coulomb blockade oscillation which reflects single electron charging in the QDs was also observed when a backgate voltage was swept. It is found that uncapped as-grown InAs QDs with diameter contain electrons without applying a gate bias.
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