We present kinetic nonlattice Monte Carlo atomistic simulations to investigate the role of Si interstitials in cluster dissolution. We show that the presence of Si interstitials from an oxidizing anneal stabilize clusters and slow down cluster dissolution, compared to anneal in inert ambient. We have also analyzed the influence of injected Si interstitials from end of range defects, due to preamorphizing implants, on deactivation and reactivation processes. We have observed that the cluster evolution can be clearly correlated to the evolution of Si interstitial defects at the end of range. The minimum level of activation occurs when the Si interstitial supersaturation is low because the end of range defects have dissolved or reach very stable configurations, such as dislocation loops.
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17 January 2005
Research Article|
January 11 2005
Role of silicon interstitials in boron cluster dissolution
Maria Aboy;
Maria Aboy
a)
Departamento de Electrónica, Universidad de Valladolid
, Campus Miguel Delibes, 47011 Valladolid, Spain
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Lourdes Pelaz;
Lourdes Pelaz
Departamento de Electrónica, Universidad de Valladolid
, Campus Miguel Delibes, 47011 Valladolid, Spain
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Luis A. Marqués;
Luis A. Marqués
Departamento de Electrónica, Universidad de Valladolid
, Campus Miguel Delibes, 47011 Valladolid, Spain
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Pedro López;
Pedro López
Departamento de Electrónica, Universidad de Valladolid
, Campus Miguel Delibes, 47011 Valladolid, Spain
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Juan Barbolla;
Juan Barbolla
Departamento de Electrónica, Universidad de Valladolid
, Campus Miguel Delibes, 47011 Valladolid, Spain
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R. Duffy;
R. Duffy
Philips Research Leuven,
Leuven, Belgium
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V. C. Venezia;
V. C. Venezia
Philips Research Leuven,
Leuven, Belgium
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Peter B. Griffin
Peter B. Griffin
Center for Integrated Systems, Stanford University
, Stanford, California 94305
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
Appl. Phys. Lett. 86, 031908 (2005)
Article history
Received:
July 21 2004
Accepted:
November 18 2004
Citation
Maria Aboy, Lourdes Pelaz, Luis A. Marqués, Pedro López, Juan Barbolla, R. Duffy, V. C. Venezia, Peter B. Griffin; Role of silicon interstitials in boron cluster dissolution. Appl. Phys. Lett. 17 January 2005; 86 (3): 031908. https://doi.org/10.1063/1.1852728
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