This letter reports channel length vertical thin-film transistors (VTFTs) in hydrogenated amorphous silicon technology. The channel length is defined by means of a dielectric film thickness, realized by an anisotropic reactive ion etching process to yield a 90° vertical transistor structure. Furthermore, the device area of the vertical TFT structure is less than that of the ubiquitous lateral TFT structure. The channel length VTFTs exhibit an ON/OFF current ratio of , a threshold voltage of , and a subthreshold slope of .
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Research Article| June 13 2005
Amorphous silicon thin-film transistors with 90° vertical nanoscale channel
Isaac Chan, Arokia Nathan; Amorphous silicon thin-film transistors with 90° vertical nanoscale channel. Appl. Phys. Lett. 20 June 2005; 86 (25): 253501. https://doi.org/10.1063/1.1949721
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