This letter reports channel length vertical thin-film transistors (VTFTs) in hydrogenated amorphous silicon technology. The channel length is defined by means of a dielectric film thickness, realized by an anisotropic reactive ion etching process to yield a 90° vertical transistor structure. Furthermore, the device area of the vertical TFT structure is less than that of the ubiquitous lateral TFT structure. The channel length VTFTs exhibit an ON/OFF current ratio of , a threshold voltage of , and a subthreshold slope of .
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