A high-spatial-resolution strain measurement by Auger electron spectroscopy was established and applied to analyze the strain distributions in epitaxial-lateral-overgrowth (ELO) GaN. The theoretical N Auger line was set by fitting the experimental data and then the relation between Auger shift and strain was obtained. By this relation the local strain distributions in regions of special interest were measured, which well interpret the mechanism of ELO process. A crucial stage for strain release was found within a distance range above the mask. This evidence confirms the existence of the Auger physical shift.
High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN
Duanjun Cai, Fuchun Xu, Junyong Kang, Pierre Gibart, Bernard Beaumont; High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN. Appl. Phys. Lett. 23 May 2005; 86 (21): 211917. https://doi.org/10.1063/1.1929866
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