A truly monopolar GaAs Fabry–Perot cavity Gunn laser is demonstrated. The device is grown by metalorganic chemical vapor deposition on a semi-insulating GaAs substrate and consists of an n=4.6×1017cm−3 doped GaAs active layer sandwiched between the AlxGa1−xAs(x=0.32) waveguiding layers. The operation of the device is based on the band to band recombination of impact-ionized nonequilibrium electron-hole pairs in the propagating high field domains in the Gunn diode, which is placed in a Fabry–Perot cavity, and biased above the threshold of negative differential resistance. Lasing from the device is observed at temperature T⩾95K⁠. The maximum power emitted from the device is P=25.4μW at λ=840nm and T=95K⁠.

Topics
Gunn diode, Infrared radiation, Thermodynamic states and processes, Negative resistance, Chemical vapor deposition, Electroluminescent spectra, Monochromators, Optical resonators, Lasers, Ionization processes
1.
J. S.
 
Heeks
,
IEEE Trans. Electron Devices
 
ED-13
,
68
(
1966
).
Google Scholar
Crossref
Search ADS
 
2.
N.
 
Balkan
 and
M.
 
Hostut
,
Physica B
 
272
,
291
(
1999
).
Google Scholar
Crossref
Search ADS
 
3.
M.
 
Hostut
, Ph.D. thesis,
The University of Essex
,
1999
.
4.
S.
 
Chung
,
A
 
Boland-Thoms
,
J. Y.
 
Wah
,
N.
 
Balkan
 and
B. K.
 
Ridley
,
Semicond. Sci. Technol.
 
19
,
S400
(
2004
).
Google Scholar
Crossref
Search ADS
 
5.
S.
 
Chung
,
A
 
Boland-Thoms
,
J. Y.
 
Wah
,
N.
 
Balkan
,
B. K.
 
Ridley
 and
J. S.
 
Roberts
,
Phys. Status Solidi C
(in press).
© 2005 American Institute of Physics.
2005
American Institute of Physics
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