We have evaluated the thermal stability of //Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing . Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing .
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