Capacitance-voltage measurements were performed on epitaxial layers of (PZT) with top and bottom (SRO) electrodes. It is shown that the sharp capacitance peak∕discontinuity which is present in the characteristics at different frequencies is directly associated with the polarization reversal. The ferroelectric film is assumed as a large band-gap semiconductor with Schottky contacts at the metal-ferroelectric interfaces. The capacitance discontinuity at the reversal (coercive) voltage is associated with a discontinuity in the built-in potential at the PZT∕SRO interfaces. The characteristics for voltage ranges outside the coercive values can be used to extract the free carrier concentrations as in the case of Schottky metal-semiconductor contacts. The carrier concentration was found to be , independent of measuring frequency and temperature up to 1 MHz and 170 °C, respectively, suggesting completely ionized shallow impurities.
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Research Article| May 02 2005
Polarization reversal and capacitance-voltage characteristic of epitaxial layers
L. Pintilie, M. Lisca, M. Alexe; Polarization reversal and capacitance-voltage characteristic of epitaxial layers. Appl. Phys. Lett. 9 May 2005; 86 (19): 192902. https://doi.org/10.1063/1.1926403
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