Capacitance-voltage measurements were performed on epitaxial layers of (PZT) with top and bottom (SRO) electrodes. It is shown that the sharp capacitance peak∕discontinuity which is present in the characteristics at different frequencies is directly associated with the polarization reversal. The ferroelectric film is assumed as a large band-gap semiconductor with Schottky contacts at the metal-ferroelectric interfaces. The capacitance discontinuity at the reversal (coercive) voltage is associated with a discontinuity in the built-in potential at the PZT∕SRO interfaces. The characteristics for voltage ranges outside the coercive values can be used to extract the free carrier concentrations as in the case of Schottky metal-semiconductor contacts. The carrier concentration was found to be , independent of measuring frequency and temperature up to 1 MHz and 170 °C, respectively, suggesting completely ionized shallow impurities.
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9 May 2005
Research Article|
May 02 2005
Polarization reversal and capacitance-voltage characteristic of epitaxial layers
L. Pintilie;
L. Pintilie
a)
Max Planck Institute for Microstructure Physics
, Weinberg 2, 06120 Halle, Germany and NIMP
, P.O. Box MG-7, Bucharest-Magurele, 077125, Romania
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M. Lisca;
M. Lisca
Max Planck Institute for Microstructure Physics
, Weinberg 2, 06120 Halle, Germany and NIMP
, P.O. Box MG-7, Bucharest-Magurele, 077125, Romania
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M. Alexe
M. Alexe
Max Planck Institute of Microstructure Physics
, Weinberg 2, D-06120 Halle, Germany
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L. Pintilie
a)
M. Lisca
M. Alexe
Max Planck Institute for Microstructure Physics
, Weinberg 2, 06120 Halle, Germany and NIMP
, P.O. Box MG-7, Bucharest-Magurele, 077125, Romaniaa)
Author to whom all correspondence should be addressed; electronic mail: [email protected]
Appl. Phys. Lett. 86, 192902 (2005)
Article history
Received:
January 18 2005
Accepted:
March 29 2005
Citation
L. Pintilie, M. Lisca, M. Alexe; Polarization reversal and capacitance-voltage characteristic of epitaxial layers. Appl. Phys. Lett. 9 May 2005; 86 (19): 192902. https://doi.org/10.1063/1.1926403
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