Negative persistent photoconductivity in backgated InAsAlSb quantum wells under red and blue light emitting diode illumination is observed to depend on both illumination energy and intensity. During these experiments the electron sheet density is varied by one order of magnitude from 5.6×1011 to 5.8×1010cm2. This behavior is attributed to the role of optically excited holes in the AlSb barrier layers near the InAs quantum well. Furthermore, a long relaxation time in the electron sheet density is observed and attributed to the slow movement of electrons from the InAs quantum well to ionized deep levels in the AlSb barriers.

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