Strain effect in charge- and orbital-ordered state has been investigated for thin films deposited on (100), (110), and (111)-oriented substrates of . Films on (001) and (111) substrates have a monotonous temperature dependence for magnetic and transport properties showing no first-order phase transition. On the other hand, films on (110) substrate show a clear ferromagnetic-antiferromagnetic and metal-insulator transition around similar to that in a bulk single crystal, which is a manifestation of the charge and orbital order. Precise control of the hole concentration was also demonstrated around half doping.
Phase control through anisotropic strain in thin films
Present address: Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan; electronic mail: email@example.com
Masao Nakamura, Yasushi Ogimoto, Hiroharu Tamaru, Makoto Izumi, Kenjiro Miyano; Phase control through anisotropic strain in thin films. Appl. Phys. Lett. 2 May 2005; 86 (18): 182504. https://doi.org/10.1063/1.1923754
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