We report on the fabrication of pentacene-based transparent thin-film transistors (TTFT) that consist of , , and indium-tin-oxide (ITO) for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The S/D electrodes of which the work function is well matched to that of pentacene were deposited on a -thick pentacene channel by thermal evaporation of NiO powder and showed a moderately low but still effective transmittance of in the visible range along with a good sheet resistance of . The maximum saturation current of our pentacene-based TTFT was about at a gate bias of showing a high field effect mobility of in the dark, and the on/off current ratio of our TTFT was about . It is concluded that jointly adopting for the S/D electrode and for gate dielectric realizes a high-quality pentacene-based TTFT.
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21 March 2005
Research Article|
March 15 2005
Transparent thin-film transistors with pentacene channel, gate, and electrodes
Jeong-M. Choi;
Jeong-M. Choi
Institute of Physics and Applied Physics,
Yonsei University
, Seoul 120-749, Korea
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D. K. Hwang;
D. K. Hwang
Institute of Physics and Applied Physics,
Yonsei University
, Seoul 120-749, Korea
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Jae Hoon Kim;
Jae Hoon Kim
Institute of Physics and Applied Physics,
Yonsei University
, Seoul 120-749, Korea
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Seongil Im
Seongil Im
a)
Institute of Physics and Applied Physics,
Yonsei University
, Seoul 120-749, Korea
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
Appl. Phys. Lett. 86, 123505 (2005)
Article history
Received:
November 05 2004
Accepted:
February 01 2005
Citation
Jeong-M. Choi, D. K. Hwang, Jae Hoon Kim, Seongil Im; Transparent thin-film transistors with pentacene channel, gate, and electrodes. Appl. Phys. Lett. 21 March 2005; 86 (12): 123505. https://doi.org/10.1063/1.1886901
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