Bismuth thin films are formed electrochemically on n-GaAs (110). Bismuth films up to a few hundred nanometers in thickness exhibit a strong (018) texture, while thicker films are polycrystalline. The barrier height of the n-GaAsBi Schottky contacts is 0.62eV, about 0.2eV lower than for electrodeposited bismuth films on GaAs (100).

1.
G. E.
Smith
,
G. A.
Baraff
, and
J. M.
Rowell
,
Phys. Rev.
135
,
A1118
(
1964
).
2.
N.
Garcia
,
Y. H.
Kao
, and
M.
Strongin
,
Phys. Rev. B
5
,
2029
(
1972
).
3.
P. B.
Alers
and
R. T.
Webber
,
Phys. Rev.
91
,
1060
(
1953
).
4.
J. H.
Mangez
,
J.-P.
Issi
, and
J.
Heremens
,
Phys. Rev. B
14
,
4381
(
1976
).
5.
J. A.
van Hulst
,
H. M.
Jaeger
, and
S.
Redelsar
,
Phys. Rev. B
52
,
5953
(
1995
).
6.
T.
van Gemmeren
,
L.
Lottermoser
,
G.
Falkenberg
,
O.
Bunk
,
R. L.
Johnson
,
R.
Feidenhans’l
, and
M.
Nielsen
,
Surf. Sci.
414
,
254
(
1998
).
7.
D. L.
Partin
,
J.
Heremans
,
D. T.
Morelli
,
C. M.
Thrush
,
C. H.
Olk
, and
T. A.
Perry
,
Phys. Rev. B
38
,
3818
(
1988
).
8.
Y.
Kim
,
S.
Cho
,
A.
Divenere
,
G. K.
Wong
, and
J. B.
Ketterson
,
J. Vac. Sci. Technol. A
17
,
3473
(
1997
).
9.
T.
Nagao
,
T.
Doi
,
T.
Sekiguchi
, and
S.
Hasegawa
,
Jpn. J. Appl. Phys., Part 1
39
,
4567
(
2000
).
10.
P. M.
Vereecken
,
L.
Sun
,
P. C.
Searson
,
M.
Tanase
,
D. H.
Reich
, and
C. L.
Chien
,
J. Appl. Phys.
88
,
6529
(
2000
).
11.
J. L.
Sullivan
,
W.
Yu
, and
S. O.
Saied
,
Appl. Surf. Sci.
90
,
309
(
1995
).
12.
P. M.
Vereecken
and
P. C.
Searson
,
Appl. Phys. Lett.
75
,
3135
(
1999
).
13.
P. M.
Vereecken
and
P. C.
Searson
,
J. Electrochem. Soc.
148
,
C733
(
2001
).
14.

X-ray measurements were obtained using a Bruker 3-axis goniometer (Bruker AXS, Inc., Madison, WI) General Area Diffraction Detector System (GADDS) with a Rigaku RU 300 (The Woodlands, TX) rotating anode generator (Cu Kα rotating anode source) operating at 40kV and 100mA. The Bruker GADDS system uses a stationary areal detector (Bruker HI-STAR) to acquire x-ray intensities as the sample is rotated about the substrate normal.

15.
D. N.
McIlroy
,
D.
Heskett
,
D. M.
Swanston
,
A. B.
McLean
,
R.
Ludeke
,
H.
Munekata
, and
M.
Prietsch
,
Phys. Rev. B
47
,
3751
(
1993
).
16.
A.
Ruocco
,
N.
Jedrecy
,
R.
Pinchaux
,
M.
Sauvage-Simkin
, and
A.
Waldhauer
,
Phys. Rev. B
50
,
8004
(
1994
).
17.
J. C.
Patrin
,
Y. Z.
Li
,
M.
Chander
, and
J. H.
Weaver
,
J. Vac. Sci. Technol. A
11
,
2073
(
1993
).
18.
E. H.
Rhoderick
and
R. H.
Williams
,
Metal-Semiconductor Contacts
(
Oxford Science
, Oxford,
1988
).
You do not currently have access to this content.