We report on the F incorporation into Si during solid-phase epitaxy (SPE) at and with the presence of B and∕or As, clarifying the F incorporation mechanism into Si. A strong segregation of F at the moving amorphous–crystalline interface has been characterized, leading to a SPE rate retardation and to a significant loss of F atoms through the surface. In B- or As-doped samples, an enhanced, local F incorporation is observed, whereas in the case of B and As co-implantation (leading to compensating dopant effect), a much lower F incorporation is achieved at the dopant peak. The F enhanced incorporation with the presence of B or As is shown to be a kinetic effect related to the SPE rate modification by doping, whereas the hypothesis of a F–B or F–As chemical bonding is refused. These results shed new light on the application of F in the fabrication of ultrashallow junctions in future generation devices.
Skip Nav Destination
,
,
,
,
,
,
,
Article navigation
21 March 2005
Research Article|
March 14 2005
Fluorine segregation and incorporation during solid-phase epitaxy of Si Available to Purchase
S. Mirabella;
S. Mirabella
a)
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
Search for other works by this author on:
G. Impellizzeri;
G. Impellizzeri
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
Search for other works by this author on:
E. Bruno;
E. Bruno
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
Search for other works by this author on:
L. Romano;
L. Romano
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
Search for other works by this author on:
M. G. Grimaldi;
M. G. Grimaldi
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
Search for other works by this author on:
F. Priolo;
F. Priolo
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
Search for other works by this author on:
E. Napolitani;
E. Napolitani
MATIS-INFM and Dipartimento di Fisica, Università di Padova
, Via Marzolo 8, I-35131 Padova, Italy
Search for other works by this author on:
A. Carnera
A. Carnera
MATIS-INFM and Dipartimento di Fisica, Università di Padova
, Via Marzolo 8, I-35131 Padova, Italy
Search for other works by this author on:
S. Mirabella
a)
G. Impellizzeri
E. Bruno
L. Romano
M. G. Grimaldi
F. Priolo
E. Napolitani
A. Carnera
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italya)
Electronic mail: [email protected]
Appl. Phys. Lett. 86, 121905 (2005)
Article history
Received:
August 05 2004
Accepted:
February 01 2005
Citation
S. Mirabella, G. Impellizzeri, E. Bruno, L. Romano, M. G. Grimaldi, F. Priolo, E. Napolitani, A. Carnera; Fluorine segregation and incorporation during solid-phase epitaxy of Si. Appl. Phys. Lett. 21 March 2005; 86 (12): 121905. https://doi.org/10.1063/1.1886907
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Related Content
Fluorine incorporation in preamorphized silicon
J. Vac. Sci. Technol. B (January 2006)
Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion
J. Appl. Phys. (May 2006)
Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon
J. Vac. Sci. Technol. B (January 2006)
Fluorine-enhanced boron diffusion induced by fluorine postimplantation in silicon
J. Appl. Phys. (October 2004)
Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si
Appl. Phys. Lett. (March 2004)