We report on the F incorporation into Si during solid-phase epitaxy (SPE) at and with the presence of B and∕or As, clarifying the F incorporation mechanism into Si. A strong segregation of F at the moving amorphous–crystalline interface has been characterized, leading to a SPE rate retardation and to a significant loss of F atoms through the surface. In B- or As-doped samples, an enhanced, local F incorporation is observed, whereas in the case of B and As co-implantation (leading to compensating dopant effect), a much lower F incorporation is achieved at the dopant peak. The F enhanced incorporation with the presence of B or As is shown to be a kinetic effect related to the SPE rate modification by doping, whereas the hypothesis of a F–B or F–As chemical bonding is refused. These results shed new light on the application of F in the fabrication of ultrashallow junctions in future generation devices.
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21 March 2005
Research Article|
March 14 2005
Fluorine segregation and incorporation during solid-phase epitaxy of Si
S. Mirabella;
S. Mirabella
a)
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
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G. Impellizzeri;
G. Impellizzeri
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
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E. Bruno;
E. Bruno
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
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L. Romano;
L. Romano
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
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M. G. Grimaldi;
M. G. Grimaldi
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
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F. Priolo;
F. Priolo
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italy
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E. Napolitani;
E. Napolitani
MATIS-INFM and Dipartimento di Fisica, Università di Padova
, Via Marzolo 8, I-35131 Padova, Italy
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A. Carnera
A. Carnera
MATIS-INFM and Dipartimento di Fisica, Università di Padova
, Via Marzolo 8, I-35131 Padova, Italy
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S. Mirabella
a)
G. Impellizzeri
E. Bruno
L. Romano
M. G. Grimaldi
F. Priolo
E. Napolitani
A. Carnera
MATIS-INFM and Dipartimento di Fisica e Astronomia, Università di Catania
, Via S. Sofia 64, I-95123 Catania, Italya)
Electronic mail: [email protected]
Appl. Phys. Lett. 86, 121905 (2005)
Article history
Received:
August 05 2004
Accepted:
February 01 2005
Citation
S. Mirabella, G. Impellizzeri, E. Bruno, L. Romano, M. G. Grimaldi, F. Priolo, E. Napolitani, A. Carnera; Fluorine segregation and incorporation during solid-phase epitaxy of Si. Appl. Phys. Lett. 21 March 2005; 86 (12): 121905. https://doi.org/10.1063/1.1886907
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