We report on the F incorporation into Si during solid-phase epitaxy (SPE) at 580°C and with the presence of B and∕or As, clarifying the F incorporation mechanism into Si. A strong segregation of F at the moving amorphous–crystalline interface has been characterized, leading to a SPE rate retardation and to a significant loss of F atoms through the surface. In B- or As-doped samples, an enhanced, local F incorporation is observed, whereas in the case of B and As co-implantation (leading to compensating dopant effect), a much lower F incorporation is achieved at the dopant peak. The F enhanced incorporation with the presence of B or As is shown to be a kinetic effect related to the SPE rate modification by doping, whereas the hypothesis of a F–B or F–As chemical bonding is refused. These results shed new light on the application of F in the fabrication of ultrashallow junctions in future generation devices.

1.
The International Technology Roadmap for Semiconductors,
2003
.
2.
R. G.
Wilson
,
J. Appl. Phys.
54
,
6879
(
1983
).
3.
D. F.
Downey
,
J. W.
Chow
,
E.
Ishida
, and
K. S.
Jones
,
Appl. Phys. Lett.
73
,
1263
(
1998
).
4.
A.
Mokhberi
,
R.
Kasnavi
,
P. B.
Griffin
, and
J. D.
Plummer
,
Appl. Phys. Lett.
80
,
3530
(
2002
).
5.
J. M.
Jacques
,
L. S.
Robertson
,
K. S.
Jones
,
M. E.
Law
,
M.
Rendon
, and
J.
Bennett
,
Appl. Phys. Lett.
82
,
3469
(
2003
).
6.
G.
Impellizzeri
,
J. H. R.
dos Santos
,
S.
Mirabella
,
F.
Priolo
,
E.
Napolitani
, and
A.
Carnera
,
Appl. Phys. Lett.
84
,
1862
(
2004
).
7.
R.
Duffy
,
V. C.
Venezia
,
A.
Heringa
,
B. J.
Pawlak
,
M. J. P.
Hopstaken
,
G. C. J.
Maas
,
Y.
Tamminga
,
T.
Dao
,
F.
Roozeboom
, and
L.
Pelaz
,
Appl. Phys. Lett.
84
,
4283
(
2004
).
8.
B. J.
Pawlak
,
R.
Surdeanu
,
B.
Colombeau
,
A. J.
Smith
,
N. E. B.
Cowern
,
R.
Lindsay
,
W.
Vandervost
,
B.
Brijs
,
O.
Richard
, and
F.
Cristiano
,
Appl. Phys. Lett.
84
,
2055
(
2004
).
9.
A.
Claverie
,
B.
Colombeau
,
B.
de Mauduit
,
C.
Bonafos
,
X.
Hebras
,
G.
Ben Assayag
, and
F.
Cristiano
,
Appl. Phys. A: Mater. Sci. Process.
76
,
1025
(
2003
).
10.
P. A.
Stolk
,
J. H.-J.
Gossmann
,
D. J.
Eaglesham
,
D. C.
Jacobson
,
C. S.
Rafferty
,
G. H.
Gilmer
,
M.
Jaraìz
,
J. M.
Poate
,
H. S.
Luftman
, and
T. E.
Haynes
,
J. Appl. Phys.
81
,
6031
(
1997
).
11.
M. Y.
Tsai
,
D. S.
Day
,
B. G.
Streetman
,
P.
Williams
, and
C. A.
Evans
, Jr.
,
J. Appl. Phys.
50
,
188
(
1979
).
12.
I.
Suni
,
U.
Shreter
,
M-A.
Nicolet
, and
J. E.
Baker
,
J. Appl. Phys.
56
,
273
(
1984
).
13.
G. L.
Olson
and
J. A.
Roth
,
Mater. Sci. Rep.
3
,
1
(
1988
).
14.
W. G.
Pfann
,
Zone Melting
(
Wiley
, New York,
1958
).
15.
G. R.
Nash
,
J. F. W.
Schiz
,
C. D.
Marsh
,
P.
Ashburn
, and
G. R.
Booker
,
Appl. Phys. Lett.
75
,
3671
(
1999
).
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