High mobility two-dimensional electron gas in $AlGaN∕GaN$ heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy Available to Purchase

The results on growth and magnetotransport characterization of $AlGaN∕GaN$ heterostructures obtained by plasma assisted molecular beam epitaxy on dislocation-free (below $100cm−2$⁠) GaN high pressure synthesized bulk substrates are presented. The record mobilities of the two dimensional electron gas (2DEG) exceeding $100000cm2∕Vs$ at liquid helium temperature and $2500cm2∕Vs$ at room temperature are reported. An analysis of the high field conductivity tensor components allowed us to discuss the main electron scattering mechanisms and to confirm unambiguously the 2DEG room temperature mobility values.