We have optimized the molecular-beam epitaxy growth conditions of self-organized quantum dots (QDs) to achieve a low density of dots emitting at 1300 nm at low temperature. We used an ultralow InAs growth rate, lower than , to reduce the density to and an InGaAs capping layer to achieve longer emission wavelength. Microphotoluminescence spectroscopy at low-temperature reveals emission lines characteristic of exciton-biexciton behavior. We also study the temperature dependence of the photoluminescence, showing clear single QD emission up to 90 K. With these results, QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum cryptography.
Growth and characterization of single quantum dots emitting at 1300 nm
B. Alloing, C. Zinoni, V. Zwiller, L. H. Li, C. Monat, M. Gobet, G. Buchs, A. Fiore, E. Pelucchi, E. Kapon; Growth and characterization of single quantum dots emitting at 1300 nm. Appl. Phys. Lett. 7 March 2005; 86 (10): 101908. https://doi.org/10.1063/1.1872213
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