Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and are obtained for devices post-deposition annealed at 300 and , respectively. TTFTs processed at 300 and yield devices with turn-on voltage of 0–15 and , respectively. Under both processing conditions, a drain current on-to-off ratio greater than is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with electronic configurations.
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler; High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl. Phys. Lett. 3 January 2005; 86 (1): 013503. https://doi.org/10.1063/1.1843286
Download citation file: